Novel Nano material Research group

Publication

Journals

  • Single-crystal growth
  • Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
  • Joo Song Lee, Soo Ho Choi, Seok Joon Yun, Yong In Kim, Stephen Boandoh, Ji-Hoon Park, Bong Gyu Shin, Hayoung Ko, Seung Hee Lee, Young-Min Kim, Young Hee Lee, Ki Kang Kim, and Soo Min Kim. Science 362, 817-821 2018
  • We discover a method of synthesizing wafer-scale single-crystal (SC) hexagonal boron nitride (hBN) monolayer film. In contrary to traditional epitaxial growth, liquid gold substrate allows the self-collimation of circular hBN grains, eventually forming an SC hBN film on a wafer scale. SC hBN serves the growth template for SC-Graphene/hBN heterostructure and SC tungsten disulfide. This is the first…
  • 2D alloy
  • Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1-xSe2 Heterostructure
  • ACS Nano 14, 8784-8792 2020
  • 2D material properties, including electronic and optical properties, can be adjusted through alloying. In this work, we dope NbSe2 with W to make a lateral heterostructure with semiconducting WSe2 on the inside and metallic NbSe2 on the outside. The each point of doping level is characterized by STEM (Scanning Transmission Electron Microscopy) and well correlated with optical (Raman, Photoluminesc…
  • Catalyst
  • Substitutional VSn Nanodispersed in MoS2 Film for Pt-scalable Catalyst
  • Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-Jin Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, and Ki Kang Kim. arXiv:2010.10908 2020
  • This work demonstrate the basal plane activation of 2D MoS2 via substituted V atoms as VSn unit in 2H-MoS2 lattice. The VSn units acts as acive sites and also charge transfer pathways for efficient hydrogen evolution.
  • Device application
  • Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
  • Ki Kang Kim, Hyun Seok Lee, and Young Hee Lee. Chem. Soc. Rev. 47, 6342-6369 2018
  • This work reviews the recent progress of the large-area synthesis of hBN and other related vdW heterostructures via CVD, and artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistantces. The challenges and future perspectives for practical applications…
102. Tip-induced nano-engineering of strain, bandgap, and exciton funneling in 2D semiconductors
Author
Yeonjeong Koo, Yongcheul Kim, Soo Ho Choi, Hyeongwoo Lee, Jinseong Choi, Dongyun Lee, Mingu Kang, Hyun Seok Lee, Ki Kang Kim, Geunsik Lee, and Kyoung-Duck Park*
Journal
Advanced Materials, 2021, 2008234
Volume(Issue)
33(17)
Page
2008234(11)
Publication Date
2021.03.11.
Project Number
IBS-R011-D1, 2018R1A2B2002302
Abstract

The tunability of the bandgap, absorption and emission energies, photoluminescence (PL) quantum yield, exciton transport, and energy transfer in transition metal dichalcogenide (TMD) monolayers provides a new class of functions for a wide range of ultrathin photonic devices. Recent strain-engineering approaches have enabled to tune some of these properties, yet dynamic control at the nanoscale with real-time and -space characterizations remains a challenge. Here, a dynamic nano-mechanical strain-engineering of naturally-formed wrinkles in a WSe2 monolayer, with real-time investigation of nano-spectroscopic properties is demonstrated using hyperspectral adaptive tip-enhanced PL (a-TEPL) spectroscopy. First, nanoscale wrinkles are characterized through hyperspectral a-TEPL nano-imaging with <15 nm spatial resolution, which reveals the modified nano-excitonic properties by the induced tensile strain at the wrinkle apex, for example, an increase in the quantum yield due to the exciton funneling, decrease in PL energy up to ≈10 meV, and a symmetry change in the TEPL spectra caused by the reconfigured electronic bandstructure. Then the local strain is dynamically engineered by pressing and releasing the wrinkle apex through an atomic force tip control. This nano-mechanical strain-engineering allows to tune the exciton dynamics and emission properties at the nanoscale in a reversible fashion. In addition, a systematic switching and modulation platform of the wrinkle emission is demonstrated, which provides a new strategy for robust, tunable, and ultracompact nano-optical sources in atomically thin semiconductors.