Novel Nano material Research group

Publication

Journals

  • Single-crystal growth
  • Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
  • Joo Song Lee, Soo Ho Choi, Seok Joon Yun, Yong In Kim, Stephen Boandoh, Ji-Hoon Park, Bong Gyu Shin, Hayoung Ko, Seung Hee Lee, Young-Min Kim, Young Hee Lee, Ki Kang Kim, and Soo Min Kim. Science 362, 817-821 2018
  • We discover a method of synthesizing wafer-scale single-crystal (SC) hexagonal boron nitride (hBN) monolayer film. In contrary to traditional epitaxial growth, liquid gold substrate allows the self-collimation of circular hBN grains, eventually forming an SC hBN film on a wafer scale. SC hBN serves the growth template for SC-Graphene/hBN heterostructure and SC tungsten disulfide. This is the first…
  • 2D alloy
  • Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1-xSe2 Heterostructure
  • ACS Nano 14, 8784-8792 2020
  • 2D material properties, including electronic and optical properties, can be adjusted through alloying. In this work, we dope NbSe2 with W to make a lateral heterostructure with semiconducting WSe2 on the inside and metallic NbSe2 on the outside. The each point of doping level is characterized by STEM (Scanning Transmission Electron Microscopy) and well correlated with optical (Raman, Photoluminesc…
  • Catalyst
  • Substitutional VSn Nanodispersed in MoS2 Film for Pt-scalable Catalyst
  • Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-Jin Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, and Ki Kang Kim. arXiv:2010.10908 2020
  • This work demonstrate the basal plane activation of 2D MoS2 via substituted V atoms as VSn unit in 2H-MoS2 lattice. The VSn units acts as acive sites and also charge transfer pathways for efficient hydrogen evolution.
  • Device application
  • Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
  • Ki Kang Kim, Hyun Seok Lee, and Young Hee Lee. Chem. Soc. Rev. 47, 6342-6369 2018
  • This work reviews the recent progress of the large-area synthesis of hBN and other related vdW heterostructures via CVD, and artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistantces. The challenges and future perspectives for practical applications…
Probing Nanoscale Structural Perturbation in WS2 monolayer via eXplainable Artificial Intelligence
Author
Hyeong Chan Suh, Jaekak Yoo, Kangmo Yeo, Dong Hyeon Kim, Yo Seob Won, Taehoon Kim, Youngwoo Cho, Ki Kang Kim, Seung Mi Lee, Heejun Yang, Dong-Wook Kim, and Mun Seok Jeong
Journal
Applied Physics Reviews
Volume(Issue)
12(2)
Page
12
Publication Date
APRIL 16 2025
Project Number
RS-2025-00563421, RS-2024-00340377, RS-2023-00260527, S3207317, 915111201, KRISSGP2025-0005-02, KSC-2024-CRE-0075, RS-2024-00453339, 2022R1A2C2091475, RS-2024-00439520
This study investigates the applicability of the machine learning model in correlative spectroscopy to enhance spatial resolution for probing
nanoscale structural perturbations. The developed model demonstrates significant enhancement in spatial resolution, achieving up to 50 nm
through the integration of Kelvin probe force microscopy and atomic force microscopy data. The predicted nanoscale Raman image reveals
abnormal behaviors associated with strain-induced lattice perturbations, such as the presence of compressive and tensile strains within identical nanoscale wrinkles. Afterward, we interpreted the trained model using explainable artificial intelligence techniques, uncovering synergistic
contributions to the Raman features across each input dataset within the nanoscale region. Our analysis demonstrates that the model effectively reflects key strain-induced lattice behaviors, highlighting its nanoscale sensitivity to structural perturbations. Finally, we validated these
findings using quantum mechanical calculations, which confirmed the strain-induced changes in Raman-active modes. This study offers
comprehensive insights into nanoscale structural perturbations, paving the way for innovative approaches to high-resolution spectroscopic
analysis in low-dimensional materials.
Published under an exclusive license by AIP Publishing.