Novel Nano material Research group

Publication

Journals

  • Single-crystal growth
  • Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
  • Joo Song Lee, Soo Ho Choi, Seok Joon Yun, Yong In Kim, Stephen Boandoh, Ji-Hoon Park, Bong Gyu Shin, Hayoung Ko, Seung Hee Lee, Young-Min Kim, Young Hee Lee, Ki Kang Kim, and Soo Min Kim. Science 362, 817-821 2018
  • We discover a method of synthesizing wafer-scale single-crystal (SC) hexagonal boron nitride (hBN) monolayer film. In contrary to traditional epitaxial growth, liquid gold substrate allows the self-collimation of circular hBN grains, eventually forming an SC hBN film on a wafer scale. SC hBN serves the growth template for SC-Graphene/hBN heterostructure and SC tungsten disulfide. This is the first…
  • 2D alloy
  • Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1-xSe2 Heterostructure
  • ACS Nano 14, 8784-8792 2020
  • 2D material properties, including electronic and optical properties, can be adjusted through alloying. In this work, we dope NbSe2 with W to make a lateral heterostructure with semiconducting WSe2 on the inside and metallic NbSe2 on the outside. The each point of doping level is characterized by STEM (Scanning Transmission Electron Microscopy) and well correlated with optical (Raman, Photoluminesc…
  • Catalyst
  • Substitutional VSn Nanodispersed in MoS2 Film for Pt-scalable Catalyst
  • Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-Jin Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, and Ki Kang Kim. arXiv:2010.10908 2020
  • This work demonstrate the basal plane activation of 2D MoS2 via substituted V atoms as VSn unit in 2H-MoS2 lattice. The VSn units acts as acive sites and also charge transfer pathways for efficient hydrogen evolution.
  • Device application
  • Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
  • Ki Kang Kim, Hyun Seok Lee, and Young Hee Lee. Chem. Soc. Rev. 47, 6342-6369 2018
  • This work reviews the recent progress of the large-area synthesis of hBN and other related vdW heterostructures via CVD, and artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistantces. The challenges and future perspectives for practical applications…
155. Large-Area Bright Emission of Plasmon-Coupled Dark Excitons at Room Temperature
Author
Hyun Jeong, Hyeong Chan Suh, Ga Hyun Cho, Huitae Joo, Yeonjeong Koo, Hayoung Ko, Ki Kang Kim, Youngbum Kim, Jeongyong Kim, Kyoung-Duck Park*, Mun Seok Jeong*
Journal
Advanced Science
Volume(Issue)
12
Page
2411841
Publication Date
2024.11.28
Project Number
2022R1A2C2091475, RS-2024-00439520
Brightening dark excitons in transition metal dichalcogenide monolayers (MLs) can provide large-area ultrathin devices for applications in quantum information science and optoelectronics. For practical applications of dark excitons, a robust and bright emission over a wide area at room temperature is desirable; however, no reliable approach has been demonstrated thus far. In this study, an efficient approach is presented for brightening dark excitons at room temperature over a large area of a WSe2 ML via coupling between plasmons and dark excitons. When a WSe2 ML is placed on gold micropillars (Au MPs), dark excitons are efficiently coupled to strongly localized surface plasmons at the edges of the Au MPs, along with a strong photoluminescence (PL) emission. Room-temperature dark exciton emission is confirmed via energy-, angle-, and time-resolved spectroscopy experiments, as well as confocal PL mapping. This study provides a generalizable method for the practical application of dark exciton.